Ion implantation apparatus and ion implanting method

Details Ion implantation apparatus and ion implanting method Ion implantation apparatus and ion implanting method

2007-06-05

2007-06-05

Vanore, David (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000

Reexamination Certificate

active

10950633

ABSTRACT:
An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.

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Copy of Notification of Reasons for Rejection from Japanese Patent Office mailed Feb. 6, 2007, in Japanese Application No. 2004-097065.

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