Ion implantation apparatus and ion implantation method

Details Ion implantation apparatus and ion implantation method Ion implantation apparatus and ion implantation method

2011-08-30

2011-08-30

Luu, Matthew (Department: 4177)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100

Reexamination Certificate

active

08008638

ABSTRACT:
This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in regions where there is partial overlap of its circumference. The holding devise turns and inclines the wafer, and also holds the wafer by three or more holding pins. The side face of the holding pin has an inversely tapered shape, and the multiple holding pins include a first holding pin whose protrusion amount is relatively small, and a second holding pin whose protrusion amount is relatively large. The holding pin which is on the upper side from the center of the wafer in the planar direction of the inclined wafer is the second holding pin, and the angle of inclination of the side face of the second holding pin at a position where ions are implanted into the wafer has an angular degree which is equal to or less than an angle of incidence of the ion beam relative to the wafer.

REFERENCES:
patent: 5930643 (1999-07-01), Sadana et al.
patent: 6794662 (2004-09-01), Leavitt et al.
patent: 6863736 (2005-03-01), Leavitt et al.
patent: 7812325 (2010-10-01), Buonodono et al.
patent: 2009/0057811 (2009-03-01), Murakami et al.
patent: 2009/0130816 (2009-05-01), Takahashi et al.
patent: 2003-45371 (2003-02-01), None
English language Abstract of JP 2003-45371, Feb. 14, 2003.

Affiliated with

Also associated with

Rating

Ion implantation apparatus and ion implantation method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus and ion implantation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus and ion implantation method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2680395