Ion implantation apparatus and fabrication method for semiconduc

Details Ion implantation apparatus and fabrication method for semiconduc Ion implantation apparatus and fabrication method for semiconduc

1998-01-09

2000-03-14

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25044211, 250251, H01J 3700

Patent

active

06037599&

ABSTRACT:
An ion implantation apparatus has a wafer processing chamber which executes ion implantation on plural product wafers 2 while integrally revolving the product wafers 2 at a high speed in a locus passing through an irradiation range of ion beams 1. A wafer wheel 5 having plural wafer holders 4 which radially elongate from a rotating shaft 3 and which respectively hold the product wafers 2 is provided with an electrically conductive body 6 (7, 8) which is grounded and which passes through the irradiation range of the ion beams 1. Further, a method is provided in which ion implantation can be conduced without causing a charge-up, in a production step of a MOS semiconductor device of the extension structure. The source and drain regions of a MOS semiconductor of the extension structure are formed by using the ion implantation apparatus.

REFERENCES:
patent: 5378899 (1995-01-01), Kimber
patent: 5525807 (1996-06-01), Hirokawa et al.
patent: 5696382 (1997-12-01), Kwon
patent: 5731593 (1998-03-01), Kodama

Affiliated with

Also associated with

Rating

Ion implantation apparatus and fabrication method for semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus and fabrication method for semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus and fabrication method for semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-171563