Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

1992-11-12

1994-10-11

Anderson, Bruce C.

Radiant energy

Electrically neutral molecular or atomic beam devices and...

25049221, H01J 3730, H05H 300

Patent

active

053549864

ABSTRACT:
An ion implantation apparatus includes a charge neutralizer having a control circuit which controls the quantity of secondary electrons irradiating a semiconductor wafer. Electrons are generated in response to a direction of movement of a semiconductor wafer to neutralize positive charge on the semiconductor wafer. The apparatus can neutralize the positive charge homogeneously and prevent electrical breakdown of the semiconductor wafer.

REFERENCES:
patent: 4361762 (1982-11-01), Douglas
patent: 4786814 (1988-11-01), Kolondra et al.
patent: 5089710 (1992-02-01), Kikuchi et al.

Affiliated with

Also associated with

Rating

Ion implantation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1660661