Ion implantation apparatus

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 3700

Patent

active

044763930

ABSTRACT:
An ion implantation apparatus in which ions are dispersed by a dispersion magnetic field and the dispersed ions of a predetermined mass number are focused on a slit and directed therethrough toward a target. The ions of the predetermined mass number are electromagnetically scanned by a deflection magnetic field preceding the slit in a direction which is orthogonal to the dispersion plane. The target is subjected to reciprocating motion in a direction which is orthogonal to the scanning direction of the ions of the predetermined mass number.

REFERENCES:
patent: 3778626 (1973-12-01), Robertson
patent: 4017403 (1977-04-01), Freeman
patent: 4367411 (1983-01-01), Hanley et al.
patent: 4383178 (1983-05-01), Shibata et al.

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