Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

1990-03-20

1991-07-02

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01V 37317

Patent

active

050287958

ABSTRACT:
An ion implanation apparatus comprises a first multipole electrostatic deflector and a second multipole electrostatic deflector. The first multipole electrostatic deflector comprises five or more electrodes equally spaced around an optical axis to each of which voltage for offset-deflecting the ion beam at the predetermined angle and voltage for simultaneously sweeping the ion beam in X and Y directions are applied. The second multipole electrostatic deflector is disposed around a second optical axis starting from the center of the first deflector and directed towards a line which makes the predetermined angle with the axis of the first deflector, and comprises the same number of electrodes as the first deflector equally spaced around the second optical axis, to each of which voltage for sweeping the ion beam in X and Y directions are applied so that the ion beam is implanted on the target(s) at a constant angle therewith while keeping the direction of incidence of the ion beam parallel with the second optical axis.

REFERENCES:
patent: 4142132 (1979-02-01), Harte
patent: 4710639 (1987-12-01), Sawaragi
patent: 4936968 (1990-06-01), Ohnishi et al.

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