Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

1996-01-30

1998-05-12

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37147

Patent

active

057510024

ABSTRACT:
An ion implantation apparatus is provided with an ion source and a mass spectrometer having an analyzer magnet and is adapted to take out ions having a predetermined kinetic energy and mass from other ions produced in the ion source. It further includes a scanner system for scanning an ion beam of the take-out ions and irradiating the ion beam onto a substrate. The scanner system includes a deflection electro-magnet which is disposed downstream of the mass spectrometer for deflecting the ion beam in a predetermined plane with respect to a reference axis. A second vacuum chamber portion through which the ion beam passes in the magnetic field of the deflection electro-magnet is provided and a first vacuum chamber portion electrically independent of the second vacuum chamber portion is also provided through which the ion beam passes in the magnetic field of the mass analyzer. A third vacuum chamber portion is also provided through which the ion beam passes and in which the substrate is arranged for irradiation. The second vacuum chamber portion is applied by a potential for modulating the potential of the ion be and the deflection electro-magnet defects the modulated ion beam so that the deflection angle of the ion beam is modulated and the ion beam is scanned and irradiated onto the substrate.

REFERENCES:
patent: 4254340 (1981-03-01), Lamplan et al.

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