Ion implantation apparatus

Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation

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25045411, H01J 37317

Patent

active

054040175

ABSTRACT:
An ion implantation apparatus is intended to perform the ion implantation for the desired surface of a target irrespective of the surface geometry thereof, and to simplify the structure. The apparatus includes a vacuum chamber, and a plurality of arc ion sources for emitting ion beams on the surface of the target disposed within the vacuum chamber. A plurality of arc ion source mounting openings are formed on the vacuum chamber. One or more of arc ion sources necessary for emitting ion beams on the desired surface of the target are airtightly mounted on the openings opposed to the above surface.

REFERENCES:
patent: 4942304 (1990-07-01), Boston
patent: 4994164 (1991-02-01), Bernardet et al.
patent: 5103766 (1992-04-01), Yoshikawa et al.

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