Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

1990-06-06

1991-06-18

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 250398, H01J 37317, H01J 37145

Patent

active

050251678

ABSTRACT:
An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.

REFERENCES:
patent: 4514638 (1985-04-01), Lischke et al.
patent: 4524277 (1985-06-01), Shimura et al.
patent: 4550258 (1985-10-01), Omata et al.
patent: 4757208 (1988-07-01), McKenna et al.
patent: 4899060 (1990-02-01), Lischke

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