Ion implant using tetrafluoroborate

Details Ion implant using tetrafluoroborate Ion implant using tetrafluoroborate

1986-12-29

1988-07-26

Fields, Carolyn E.

Radiant energy

Ion generation

With sample vaporizing means

250423R, H01J 2702

Patent

active

047602635

ABSTRACT:
Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.

REFERENCES:
patent: 2882410 (1959-04-01), Brobeck
patent: 4411575 (1983-10-01), Miller

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