Ion implant silicon nitride mask for a silicide free contact reg

Details Ion implant silicon nitride mask for a silicide free contact reg Ion implant silicon nitride mask for a silicide free contact reg

1996-03-19

1998-01-06

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Resistor

438586, 438655, 438659, H01L 2128

Patent

active

057054410

ABSTRACT:
A method is described for forming a high contact resistance region within the drain region or source region of an insulated gate field effect transistor as part of a high resistance resistor for electrostatic discharge protection of the field effect transistor. The silicide free contact region is formed as part of a self aligned silicide, or salicide, contact process. Nitrogen ion implantation followed by annealing is used to form a silicon nitride mask at the silicide free contact region. The mask prevents the formation of low contact resistance metal silicide at the silicide free contact region during the salicide process. Low resistance contacts to the gate electrode, source, and drain are formed using metal silicide.

REFERENCES:
patent: 4406051 (1983-09-01), Iizuka
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 5438015 (1995-08-01), Lur
patent: 5547881 (1996-08-01), Wang et al.

Affiliated with

Also associated with

Rating

Ion implant silicon nitride mask for a silicide free contact reg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implant silicon nitride mask for a silicide free contact reg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implant silicon nitride mask for a silicide free contact reg will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2328960