Metal treatment – Compositions – Heat treating
Patent
1983-06-15
1985-01-22
Hearn, Brian E.
Metal treatment
Compositions
Heat treating
29576B, 29578, 357 61, 148191, H01L 21265
Patent
active
044949979
ABSTRACT:
A mask and encapsulating layer suitable for use on gallium arsenide substrates is described incorporating a layer of germanium selenide which is photosensitive and may be exposed and developed to form a mask suitable for ion implantation and which may also remain as a capping layer during an anneal process of ion implanted regions in a controlled atmosphere and temperature furnace wherein the layer of germanium selenide is converted to germanium which may subsequently be removed from the gallium arsenide substrate after the step of annealing.
REFERENCES:
patent: 4267014 (1981-05-01), Davey et al.
Kasahara et al., "Capless Anneal of Ion-implanted GaAs in Controlled Arsenic Vapor", J. Appl. Phys., vol. 50, No. 1, Jan. 79, pp. 541-543.
Anderson, Jr. et al., "Smooth & Continuous Ohmic Contacts to GaAs Using Epitaxial Ge Films", J. Appl. Phys., vol. 49, No. 5, May 78, pp. 2998-3000.
Nagai et al., "New Application of Se-Ge Glasses to Silicon Microfabrication Technology", Applied Phys. Letters, vol. 28, No. 3, Feb 76, pp. 145-147.
Balasubramanyam, "An Inorganic Resist for Ion Beam Microfabrication", J. Vac. Sci. Technol., vol. 19, No. 1, June 1981, pp. 18-22.
Kim He B.
Lemnios Zachary J.
Hearn Brian E.
Sutcliff W. G.
Thane Nathan
Westinghouse Electric Corp.
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