Ion implant device with modulated scan output

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504923, 250398, H01J 37302

Patent

active

054183782

ABSTRACT:
An ion implanter is provided having a modulator which provides a variable frequency modulated scan signal. The modulator ensures that the scan signal will not retrace substantially upon itself during a scan cycle, and during subsequent scan cycles. Minimization of retrace allows for a more uniform dopant placed across the upper surface of the wafer and thereby eliminates or minimizes underdoping areas often arising between retraced beam widths when heavy atomic species are implanted.

REFERENCES:
patent: 3688203 (1972-08-01), Harrison
patent: 4449051 (1984-05-01), Berkowitz
patent: 4736107 (1988-04-01), Myron
patent: 4746803 (1988-05-01), Inoue et al.
patent: 4761559 (1988-08-01), Myron
patent: 4851693 (1989-07-01), Fisher
patent: 5012111 (1991-04-01), Ueda

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