Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-03-14
1995-05-23
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, 250398, H01J 37302
Patent
active
054183782
ABSTRACT:
An ion implanter is provided having a modulator which provides a variable frequency modulated scan signal. The modulator ensures that the scan signal will not retrace substantially upon itself during a scan cycle, and during subsequent scan cycles. Minimization of retrace allows for a more uniform dopant placed across the upper surface of the wafer and thereby eliminates or minimizes underdoping areas often arising between retraced beam widths when heavy atomic species are implanted.
REFERENCES:
patent: 3688203 (1972-08-01), Harrison
patent: 4449051 (1984-05-01), Berkowitz
patent: 4736107 (1988-04-01), Myron
patent: 4746803 (1988-05-01), Inoue et al.
patent: 4761559 (1988-08-01), Myron
patent: 4851693 (1989-07-01), Fisher
patent: 5012111 (1991-04-01), Ueda
Dolman Denver L.
Friede Donald L.
Le Van
Advanced Micro Devices
Berman Jack I.
Beyer James
LandOfFree
Ion implant device with modulated scan output does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion implant device with modulated scan output, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implant device with modulated scan output will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2141601