Ion implant chamber for ion implantation system

Details Ion implant chamber for ion implantation system Ion implant chamber for ion implantation system

1981-03-13

1983-08-16

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

G21G 508

Patent

active

043993656

ABSTRACT:
An ion implant chamber for an ion implantation system is disclosed in which first and second discs are arranged concentrically and can be simultaneously rotated, the first disc is provided on a circle thereon with a plurality of wafer receiving recesses each having different diameters at both surfaces of the first disc to prevent a wafer from passing through the recess, and ions impinge upon the wafer through the end of the recess having a smaller diameter; in which when wafers have been loaded in the wafer receiving recesses, the second disc is pressed against the first disc and the wafers are held by the first and second discs, since the second disc is movable in the axial direction thereof; and in which the ion implant chamber can be separated into at least two parts, the first one of the parts can move together with the second disc, and the exchange of wafers is made through a gap between the parts thus separated.

REFERENCES:
patent: 4274004 (1981-06-01), Kanai
"High-Speed Disk Scanner for Ion Implantation," D. Balderes, J. R. Kranik, and W. F. Mueller, IBM Technical Disclosure Bulletin, vol. 19, No. 3, Aug. 1976, pp. 867-868.

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