Ion implanation method and device using thereof

Details Ion implanation method and device using thereof Ion implanation method and device using thereof

2005-11-29

2008-03-11

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S42300F, C250S424000

Reexamination Certificate

active

07342239

ABSTRACT:
An ion implantation method and device for forming an ion implantation area in a predetermined area of a substrate is provided. The method comprises the following steps. First, an ion beam is provided, then a first shape of cross-section and a first ion density distribution of the ion beam are detected. Then, a second shape of cross-section and a second ion density distribution of the ion beam are detected by moving the ion beam along a predetermined scanning path. Thereafter, the predetermined scanning path is adjusted and optimized according to the first shape of cross-section, the first ion density distribution, the second shape of cross-section and the second ion density distribution. Then, the ion beam is optimized along the optimized predetermined scanning path to form the ion implantation area in the predetermined area of the substrate.

REFERENCES:
patent: 7137354 (2006-11-01), Collins et al.

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