Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1980-11-14
1982-06-29
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
156643, C23C 1500, C23F 100
Patent
active
043371329
ABSTRACT:
The invention is a method of minimizing redeposition of thin film material being removed by ion impact via a patterned resist mask, which invention determines the resist mask etching rates in selected atmospheres and determines the material etching rates in selected atmospheres. Then the mask thickness is selected relative to the material thickness, the ambient gases, and the ion beam parameters to cause the resist mask to be faceted to the edges of underlying material as the unprotected layer is removed such that no resist walls remain to receive redeposited material. A different embodiment of the invention employes a getter mask material between the resist mask and said material where the thickness and etching rates of resist, said material and getter material are relatively selected to cause the unprotected getter material to be removed shortly prior to faceting of the resist down to the protected getter material in a first environment, and continues etching the thin film material in a different environment which also causes resist removal while eroding the getter mask very slowly. The getter mask can thus be very thin to minimize redeposition.
REFERENCES:
C. M. Melliar-Smith, "Ion Etching for Pattern Delineation", J. Vac. Sci. Technol., vol. 13, pp. 1008-1022 (1976).
M. Cantagrel, "Comparison of The Properties of Different Materials Used as Masks for Ion Beam Etching", J. Vac. Sci. Technol., vol. 12, pp. 1340-1343 (1975).
R. E. Lee, "Microfabrication by Ion-Beam Etching", J. Vac. Sci. Technol., vol. 16, pp. 164-170 (1979).
T. Funayama et al., "Fabrication of Micron & Submicron Bubble Memory Devices by a Mask Transfer Technique with Subsequent Getter-Ion Etching", J. Vac. Sci. Technol., vol. 15, pp. 998-1000 (1978).
Caldwell Wilfred G.
Hamann H. Fredrick
Rockwell International Corporation
Weisstuch Aaron
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