Ion doping apparatus, ion doping method, semiconductor...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492300

Reexamination Certificate

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07745803

ABSTRACT:
An ion doping apparatus includes: a chamber11; a discharge section13for discharging a gaseous content from within the chamber11; an ion source12being provided in the chamber11and including an inlet14through which to introduce a gas containing an element to be used for doping, the ion source12decomposing the gas introduced through the inlet14to generate ions containing the element to be used for doping; an acceleration section23for pulling out from the ion source12the ions generated at the ion source12and accelerating the ions toward a target object held in the chamber; and a beam current meter26for measuring a beam current caused by the accelerated ions. The beam current is measured by the beam current meter26a plurality of times, and if a result of the measurements indicates a stability of the beam current, the ion doping apparatus automatically begins to implant into the target object the ions containing the element to be used for doping. Thus, an ion doping apparatus having excellent doping amount controllability is provided.

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