Ion doping apparatus, and multi-apertured electrode for the...

Details Ion doping apparatus, and multi-apertured electrode for the... Ion doping apparatus, and multi-apertured electrode for the...

2005-12-06

2005-12-06

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

C250S42300F, C315S111710, C256S013000

Reexamination Certificate

active

06972418

ABSTRACT:
With the object of suppressing dispersion in the dose of ion implantation within a narrow range in a direction orthogonal to the scan direction of a substrate, an ion doping apparatus irradiates the substrate to-be-scanned with ion beams which are drawn out from multi-apertured electrodes (200in FIG.2) each being provided with a large number of electrode apertures (210). In electrode aperture groups α, . . . of the multi-apertured electrode (200), each including a plurality of electrode apertures (210), the individual electrode apertures (210) are arranged having positional shifts in the direction Y orthogonal to the scan direction X of the substrate so as to homogenize the doses of ion beam implantations into the substrate by the electrode aperture groups α, . . . .

REFERENCES:
patent: 5023458 (1991-06-01), Benveniste et al.
patent: 5943593 (1999-08-01), Noguchi et al.
patent: 2004/0002202 (2004-01-01), Horsky et al.

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