Ion current generator system for thin film formation, ion implan

Radiant energy – Ion generation – Field ionization type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

250423P, 2504922, 2504931, 3133631, 31323141, 31511181, H01J 3708

Patent

active

048930199

ABSTRACT:
The ion current generator is employed for thin film formation, ion implantation, etching, sputtering or the like. A vaporizer supplies material atoms to a predetermined region, and then, the material atoms are excited to a Rydberg state by lasers supplied from laser oscillators. The material atoms thus excited are ionized by an electric field applied from electric field application means, to be lead to a predetermined direction. Accordingly, an ion current can be generated at a high efficiency and low cost.

REFERENCES:
patent: 3914655 (1975-10-01), Dreyfus et al.
patent: 4020350 (1977-04-01), Ducas
patent: 4061921 (1982-04-01), Cantrell et al.
patent: 4070580 (1978-01-01), Gallagher et al.
patent: 4433241 (1984-02-01), Boesl et al.
patent: 4692627 (1987-09-01), Ueda et al.
patent: 4716295 (1987-12-01), Ueda et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion current generator system for thin film formation, ion implan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion current generator system for thin film formation, ion implan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion current generator system for thin film formation, ion implan will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-146683

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.