Ion concentration transistor and dual-mode sensors

Details Ion concentration transistor and dual-mode sensors Ion concentration transistor and dual-mode sensors

2004-04-16

2009-06-09

Noguerola, Alex (Department: 1795)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C204S416000, C422S082030, C438S142000

Reexamination Certificate

active

07544979

ABSTRACT:
An ion concentration sensor produces a signal reflective of the ion concentration within a solution. The ion concentration sensor is based on an ion sensitive transistor having a solution input, a reference input, a diffusion input, and a diffusion output. The ion sensitive transistor is connected as a pass transistor, such that the diffusion output provides an electrical signal indicating an ion concentration in a solution contacting the solution input.

REFERENCES:
patent: 4332658 (1982-06-01), Tsuboshima
patent: 4444644 (1984-04-01), Hiramoto et al.
patent: 4743954 (1988-05-01), Brown
patent: 6794197 (2004-09-01), Indermuhle et al.
Morgenshtein, Arkadiy, “Design and Methodology of ISFET (Ion Sensitive Field Effect Transistor) Microsystems for Bio-Telemetry”, Master of Science Thesis, Submitted to the Senate of The Technion—Israel Institute of Technology, Haifa, Israel, Apr. 2003.
Sawada, Kazuaki, et al. “Novel Fused Sensor for Photo and Ion Sensing”, Transducers 2003 Proceedings, The 12th International Conference on Solid-State Sensors, Actuators, and Microsystmes, Jun. 8-12, 2003., pp. 1023-1026.
Morgenshtein et al, “ISFET Operation in Pass-Transistor Mode without Readout Circuits”, Proc. of Eurosensors, 17th European Conference on Solid-State Transducers, Portugal, pp. 145-148, Sep. 2003.
Morgenshtein et al, “Combined pH-Image Sensor based on Pass-Transistor Operation of ISFET”, Proc. of Eurosensors, 17th European Conference on Solid-State Transducers, Portugal, pp. 1132-1135, Sep. 2003.
Bergveld et al, “Analytical and Biomedical Applications of Non-Selective Field-Effect Transistors”, Chap. 8, from “Comprehensive Analytical Chemistry”, G. Svehla, Ed., vol. XXIII, Elsevier, NY,NY, 1988.
Jakobson, C., “Ion Sensitive Field Effect Transistors in Standard CMOS For Brain Monitoring”, Research Thesis, The Technion, Israel, 2001.
Casans et al, “Circuit Provides Constant Current for ISFETs/MEMFETs”, Design Ideas, Oct. 2000, p. 164.
Morgenshtein “Design and Methodology of ISFET (Ion Sensitive Field Effect Transistor) Microsystems for Bio-Telemetry”, Presentation of Lecture in the Department of Biomedical Engineering, Technion—Israel Institute of Technology, Haifa, IL, 45 P., Mar. 2003.

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