Ion bombardment of electrical lapping guides to decrease...

Details Ion bombardment of electrical lapping guides to decrease... Ion bombardment of electrical lapping guides to decrease...

2006-01-03

2006-01-03

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Forming or treating article containing magnetically...

C216S038000, C216S041000, C216S049000, C216S052000, C216S059000, C216S066000, C216S067000, C427S130000, C204S192340, C029S603080, C029S603150, C029S603160, C451S005000, C451S041000

Reexamination Certificate

active

06982042

ABSTRACT:
A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping

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