Coating apparatus – Gas or vapor deposition – With treating means
Patent
1985-07-30
1990-07-03
Nguyen, Nam X.
Coating apparatus
Gas or vapor deposition
With treating means
20419231, 20429805, 118 501, 118723, 118730, C23C 1400
Patent
active
049388592
ABSTRACT:
In a high frequency ion plating device, when an evaporation substrate is intended to be rotated to form a uniform evaporated film, a variation in resistance of a contact in a rotating portion arises, making it almost impossible to provide a constant duration of high frequency discharge.
A supply of a high frequency power to the substrate is effected through an auxiliary electrode such as a coil, and a dc voltage is induced in the auxiliary electrode and applied to the substrate simultaneously with a high frequency voltage. As a result of the coil the high frequency discharge is stabilized, and a stabilized supply of power is rendered possible.
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The Physics of Fluids, vol. 6, No. 9, Sep. 1963, pp. 1346-1354, Butler et al., "Plasma Sheath Formation by Radio-Frequency Fields".
Journal of Vacuum Science Technology, Jan.-Mar. 1983, pp. 60-68, Horwitz, "RF Sputtering-Voltage Division Between Two Electrodes".
Hara Kazuo
Ide Yoshio
Miyake Masaaki
Mori Masahiro
Sawaki Tsukasa
Nguyen Nam X.
Vacuum Optics Corporation of Japan
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