Ion beam utilization during scanned ion implantation

Details Ion beam utilization during scanned ion implantation Ion beam utilization during scanned ion implantation

2005-10-11

2005-10-11

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110

Reexamination Certificate

active

06953942

ABSTRACT:
The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

REFERENCES:
patent: 4736107 (1988-04-01), Myron
patent: 6429442 (2002-08-01), Tomita et al.
patent: 6580083 (2003-06-01), Berrian
patent: 2004/0058513 (2004-03-01), Murrell et al.
patent: WO 2004/001789 (2003-12-01), None

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