Ion beam system

Details Ion beam system Ion beam system

2006-07-18

2006-07-18

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200

Reexamination Certificate

active

07078710

ABSTRACT:
A method of reducing foreign material contamination of a substrate in an ion beam system and an ion beam system. The system, including: a vacuum chamber having an ion beam axis; a substrate chamber free to tilt about a tilt axis, the tilt axis orthogonal to and intersecting the ion beam axis; a flexible bellows connecting an opening in the substrate chamber and an opening in the vacuum chamber, both openings co-axially aligned with the ion beam axis, the bellows providing a vacuum seal between the substrate chamber and the vacuum chamber; and a hollow foreign material shield open at a top proximate to the vacuum chamber and a bottom proximate to the substrate chamber, the foreign material shield located between the ion beam axis and the flexible bellows, the top and bottom of the foreign material shield co-axially aligned with the ion beam axis.

REFERENCES:
patent: 5633506 (1997-05-01), Blake
patent: 5670217 (1997-09-01), Blake et al.

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