Ion beam source with gas introduced directly into...

Details Ion beam source with gas introduced directly into... Ion beam source with gas introduced directly into...

2006-01-24

2006-01-24

Hassanzadeh, P. (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230CB, C118S7230EB, C118S7230FE, C118S7230AN, C118S7230VE, C118S7230MP, C204S192100, C204S298160, C427S562000

Reexamination Certificate

active

06988463

ABSTRACT:
An ion source is provided wherein depositing gas and/or maintenance gas is/are introduced into the ion source via the vacuum/depositing chamber, thereby reducing the amount(s) of undesirable insulative build-ups on the anode and/or cathode of the source in an area proximate the electric gap between the anode and cathode. In certain embodiments, an insulative and/or dielectric insert(s) and/or layer(s) is/are provided in at least part of an area between the anode and cathode so as to help reduce undesirable insulative build-ups on the anode and/or cathode. More efficient ion source operations is thus achievable.

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