Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-06-07
2005-06-07
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492220, C250S492230, C250S492300, C250S442110
Reexamination Certificate
active
06903350
ABSTRACT:
Ion implantation systems and scanning systems therefor are provided, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods are provided for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.
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“NV-6208: A Midcurrent Ion Implanter with Constant Beam Angle of Incidence”, Jimmy I. Fleming, Jerald P. Dykstra, Monty I. King, Andy M. Ray and Robert B. Simonton, Nuclear Instruments and Methods in Physics Research BJ7/38, 1989, pp. 601-604.
Ray Andrew M.
Vanderberg Bo H.
Wenzel Kevin W.
Axcelis Technologies Inc.
Eschweiler & Associates LLC
Lee John R.
Souw Bernard E.
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