Ion beam scanning control methods and systems for ion...

Details Ion beam scanning control methods and systems for ion... Ion beam scanning control methods and systems for ion...

2007-04-09

2009-06-23

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S286000, C250S3960ML, C250S492200, C250S492300

Reexamination Certificate

active

07550751

ABSTRACT:
One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

REFERENCES:
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patent: 6903350 (2005-06-01), Vanderberg et al.
patent: 7078707 (2006-07-01), Benveniste et al.
patent: 2004/0256573 (2004-12-01), Mollica
patent: 2006/0006346 (2006-01-01), Rathmell et al.
patent: 2006/0057303 (2006-03-01), Agarwal et al.
patent: 2007/0023697 (2007-02-01), Purser et al.
International Search Report for PCT/US2007/008784 dated Oct. 16, 2007.

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