Ion beam profiling method and apparatus

Details Ion beam profiling method and apparatus Ion beam profiling method and apparatus

1991-09-27

1993-03-30

Berman, Jack I.

Radiant energy

With charged particle beam deflection or focussing

With detector

250398, 2504922, G01N 2300

Patent

active

051986760

ABSTRACT:
An ion beam intensity and emittance measuring system. A substrate supports conductive zones or regions that are impacted by an ion beam. Periodically the conductive regions are discharged through an integrator circuit which produces an output corresponding to the charge buildup on the conductive region. By determining the charge for multiple such regions impacted by an ion beam, a two-dimensional mapping of ion beam intensity vs. position is obtained on essentially a real-time basis. An emittance mask is also placed over the substrate and a measure of the emittance or spread of the ion beam is obtained.

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