Ion beam potential detection probe

Details Ion beam potential detection probe Ion beam potential detection probe

1991-01-29

1992-05-12

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250251, H01J 37317

Patent

active

051130742

ABSTRACT:
A sensor positioned relative to an ion beam for use in an ion implantation system for doping semiconductor wafers. The sensor allows relatively accurate determination of ion beam potential so that steps can be taken to minimize this potential. In a preferred design, a number of electrodes are positioned relative the ion beam and biased at control voltages which allow the ion beam potential to be determined. In one embodiment, the ion beam potential is used to control injection of neutralizing electrons into the ion beam.

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A. J. T. Holmes, Theoretical & Experimental Study of Space Charge in Intense Ion Beams, Jan. 1979, pp. 389-407, vol. 19, No. 1.
I. H. Hutchinson, Principles of Plasma Diagnostics, pp. 79-84.

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