Ion beam measuring method and ion implanting apparatus

Details Ion beam measuring method and ion implanting apparatus Ion beam measuring method and ion implanting apparatus

2008-05-06

2008-05-06

Kim, Robert (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000

Reexamination Certificate

active

10574281

ABSTRACT:
A beam current density distribution in y direction of an ion beam4at a position of a forestage beam restricting shutter32is measured by measuring a change in a beam current of the ion beam4incident on a forestage multipoint Faraday24by passing an outer side of a side34of the shutter32while driving the forestage beam restricting shutter32in y direction by a forestage shutter driving apparatus36. Further, a beam current density distribution in y direction of the ion beam4at a position of a poststage beam restricting shutter42is measured by measuring a change in the beam current of the ion beam4incident on a poststage multipoints Faraday28by passing an outer side of a side44of the shutter42while driving the poststage beam restricting shutter42in y direction by a poststage shutter driving apparatus46. Further, at least one of an angle deviation, a diverging angle and abeam side in y direction of the ion beam4is measured by using a result of the measurement.

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