Ion beam lithography

Details Ion beam lithography Ion beam lithography

1988-07-29

1991-01-15

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, 250398, 250281, 250248, 430 30, H01J 3730

Patent

active

049856340

ABSTRACT:
Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

REFERENCES:
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patent: 3801792 (1974-04-01), Lin
patent: 4563587 (1986-01-01), Ward et al.
patent: 4823011 (1989-04-01), Stengl et al.
patent: 4859857 (1989-08-01), Stengl et al.
Lischke et al., "A Study on the Operation Condition for (1:4) Electron Projection Systems," Eighth International Conference on Electron and Ion Beam Science and Technology, Seattle, 1978.
Lischke et al., "Investigations about High Performance Electron-Microprojection Systems," Eighth International Conference on Electron and Ion Beam Science and Technology, Seattle, 1978.
Asai et al., J. Vac. Sci. Technol., 16 (6), Nov./Dec. 1979, pp. 1710-1713.

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