Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate
2005-08-31
2008-10-14
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
C257S788000, C257S798000, C257SE21203, C257SE21569, C257SE21572, C438S014000, C438S016000, C438S718000
Reexamination Certificate
active
07436075
ABSTRACT:
The ion beam irradiation apparatus has a vacuum chamber10, an ion source2, a substrate driving mechanism30, rotation shafts14, arms12, and a motor. The ion source2is disposed inside the vacuum chamber10, and emits an ion beam4which is larger in width than a substrate6, to the substrate6. The substrate driving mechanism30reciprocally drives the substrate6in the vacuum chamber10. The center axes14aof the rotation shafts14are located in a place separated from the ion source2toward the substrate, and substantially parallel to the surface of the substrate. The arms12are disposed inside the vacuum chamber10, and support the ion source2through the rotation shafts14. The motor is disposed outside the vacuum chamber10, and reciprocally rotates the rotation shaft14.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Lebentritt Michael S
Nissin Ion Equipment Co., Ltd.
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