Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-02-03
2009-02-24
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492300, C250S42300F, C315S111210, C315S111810
Reexamination Certificate
active
07495241
ABSTRACT:
The frequency of replacement of an insulating spacer disposed between grids of an ion beam irradiation apparatus is to be reduced. In addition, the intervals of the multiple grids in the ion beam irradiation apparatus are to be kept constant. To achieve these objects, in a so-called insulating spacer provided for maintaining insulation between the grids, a groove portion having a bottom onto which sputtered materials are hard to adhere is provided on the central portion of the side surface of the insulating spacer all along its circumference.
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Ito Katsumi
Maekawa Kazuya
Sato Jun-ichi
Takeuchi Etsuo
Yajima Nobuo
Berman Jack I
Logie Michael J
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
TDK Corporation
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