Ion beam induced deposition of metals

Details Ion beam induced deposition of metals Ion beam induced deposition of metals

1990-05-25

1992-04-14

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156643, 20419211, 20419234, 20419237, 427 431, 427 97, 427125, 427237, 427253, B05D 306

Patent

active

051046849

ABSTRACT:
Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may be obtained by milling a cavity or trench with the focused beam and then locally applying the precursor vapor while scanning of the beam continues. Platinum containing features deposited in this way extend horizontally between wires, or vertically between layers to form conductive interconnects in integrated circuits, and also form pattern repairs in x-ray masks. The platinum chemistry is compatible with silicon wafer processing.

REFERENCES:
patent: 4748045 (1988-05-01), Ehrlich et al.
patent: 4756927 (1988-07-01), Black et al.
patent: 4868005 (1989-09-01), Ehrlich et al.
patent: 4876112 (1989-10-01), Kaito et al.
"Focused Ion Beam Induced Deposition", John Melngailis and Patricia G. Blauner Mat. Res. Soc. Symp. Proc. vol. 147 (1989).

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