Ion beam implanter scan control system

Details Ion beam implanter scan control system Ion beam implanter scan control system

1986-09-24

1988-04-05

Church, Craig E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504922, H01J 37302

Patent

active

047361077

ABSTRACT:
An ion beam implantation system utilizing two pairs of mutually orthogonal scanning electrodes. Two sawtooth waveforms of approximately the same frequency are applied to the scanning electrodes to produce four sided scanning patterns. The dimensions of these scanning patterns are varied to sweep out a scan pattern that uniformly implants a circular wafer. By perturbing the scanning voltages the instantaneous beam speed is adjusted to compensate for small dose nonuniformities.

REFERENCES:
patent: 4283631 (1981-08-01), Turner
patent: 4421988 (1983-12-01), Robertson et al.
patent: 4449051 (1984-05-01), Berkowitz
patent: 4593200 (1986-06-01), McGuire, III
Vadehra, IBM Technical Disclosure Bulletin, vol. 19, No. 2, Jul. 1976, pp. 449-450.

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