Ion beam implanter for providing cross plane focusing

Details Ion beam implanter for providing cross plane focusing Ion beam implanter for providing cross plane focusing

1992-03-06

1993-01-05

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01V 37317

Patent

active

051773660

ABSTRACT:
An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam passes through electrodes positioned along a beam travel path that both redeflect the once-deflected ion beam and accelerate the ions to a desired final energy. Ions within the beam exit the accelerator and impact a workpiece at a uniform, controlled impact angle due to ion focusing in a scanning plane and an orthogonal cross plane.

REFERENCES:
patent: 4276477 (1981-06-01), Enge
patent: 4687936 (1987-08-01), McIntyre et al.
patent: 4794305 (1988-12-01), Matsukawa
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5026997 (1991-06-01), Benveniste
patent: 5091655 (1992-02-01), Dykstra et al.

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