Ion beam implanter control system

Details Ion beam implanter control system Ion beam implanter control system

1986-03-05

1987-10-13

Fields, Carolyn E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504411, G21K 508

Patent

active

047000775

ABSTRACT:
A scanning ion beam implanter having a wafer support to control the angle of incidence between an ion beam and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes structure for pivoting the bent wafer about a pivot axis. The pivoting of the wafer is synchronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.

REFERENCES:
patent: 3832948 (1974-09-01), Barker
patent: 3920233 (1986-11-01), Stuckert
patent: 4282924 (1981-08-01), Faretree
patent: 4475223 (1984-10-01), Taniguchi et al.
patent: 4514637 (1985-04-01), Dykstra et al.

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