Ion beam dosimetry

Details Ion beam dosimetry Ion beam dosimetry

1987-08-03

1989-05-16

Howell, Janice A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504741, A21K 2702, G01N 500

Patent

active

048312711

ABSTRACT:
A work piece 13 is implanted with N.sup.+ ions from a source 1 to improve its surface hardness. The dosage of implanted ions is monitored by a member 14 which changes its color in dependence upon the dose. The member 14 may comprise a tantalum plate 15 with an anodic oxide layer 16 of a thickness to produce interference colors. In accordance with the invention this layer 16 changes colors as a function of the ion dosage.

REFERENCES:
patent: 2664511 (1953-12-01), Moos
patent: 4570070 (1986-02-01), Tabei
Wada et al., "Silicon Planar Devices Using Nitrogen Ion Implantation", Jap. Jour. of Appl. Physics, vol. 15, No. 9, Sep. 1976, pp. 1725-1730.

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