Ion beam contamination sensor

Details Ion beam contamination sensor Ion beam contamination sensor

1991-04-05

1992-09-08

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 2504923, H01J 37244

Patent

active

051460980

ABSTRACT:
The present invention is directed to systems and methods for accurately detecting the presence of particles, such as contaminants and residual gases in an end station during wafer processing. In a preferred embodiment, the type and amount of each contaminant can be determined by spectrally decomposing in situ light generated during wafer processing to detect characteristics of potential contaminants and/or residual gases. Characteristics which can be used to identify the presence of contaminants include abnormal wavelength, frequency and/or intensity of energy present during wafer processing.

REFERENCES:
patent: 4874947 (1989-10-01), Ward et al.
patent: 4988872 (1991-01-01), Nagatsuka et al.
patent: 5047648 (1991-09-01), Fishkin et al.

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