Ion beam apparatus

Details Ion beam apparatus Ion beam apparatus

1986-12-17

1988-08-30

Anderson, Bruce C.

Radiant energy

Ion generation

Field ionization type

2504922, 31511181, 31511121, 31511171, H01J 724

Patent

active

047679310

ABSTRACT:
A thin film manufacturing and processing apparatus by using an ion beam comprises a plasma producing vessel for producing therein a plasma by ionizing a neutral gas, an electrode assembly for extracting ions in the form of an ion beam from the plasma, a vacuum container accomodating therein a target to be worked through irradiation of the ion beam, and permanent magnets disposed on the outer periphery of the plasma generating vessel which is formed of a nonmagnetic material and serves as an anode electrode. An ion beam of high uniformity and a large diameter can be obtained to allow manufacture and processing of large scale magnetic thin films and semiconductors with high precision.

REFERENCES:
patent: 4383177 (1983-05-01), Keller et al.
patent: 4661710 (1987-04-01), Verney et al.
Kaufman et al., "Technological Applications of Broad-Beam Ion Sources Used in Sputtering, Pt. 1, Ion Source Technology," J. Vac. Sci. Tech., 21(3) Sep./Oct. 82.
Kaufman, "Broad-Beam Ion Sources: Present Status and Future Directions," J. Vac. Sci. Tech., 4(3) May/Jun. 1986.

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