Inverter with improved load line characteristic

Details Inverter with improved load line characteristic Inverter with improved load line characteristic

1977-11-15

1979-02-13

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29578, B01J 1700

Patent

active

041387821

ABSTRACT:
An insulated gate field effect transistor (IGFET) static inverter having an improved load line characteristic is disclosed. The inverter comprises an enhancement mode IGFET active device in a first portion of a semiconductor substrate, having its drain connected to an output node, its source connected to a source potential and its gate connected to an input signal source. The first portion of the substrate is connected to a first substrate potential. A depletion mode IGFET load device is located in a second portion of the semiconductor substrate which is electrically isolated from the first portion. The depletion mode load device has its drain connected to a drain potential and its source, gate and the second portion of the semiconductor substrate all connected to the output node. In this manner, the rise in the source-to-substrate voltage bias during the turn-off transition is eliminated in the depletion mode load device, providing an improved load current characteristic for the inverter. Alternate embodiments are disclosed directed to an all N-channel inverter, an all P-channel inverter, and a complementary inverter consisting of a P-channel load device and an N-channel active device.

REFERENCES:
patent: 3766637 (1973-10-01), Norris
patent: 3925120 (1975-12-01), Saida

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