Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-08-14
2007-08-14
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290, C365S185260, C365S185170, C365S185050
Reexamination Certificate
active
11084214
ABSTRACT:
NVM arrays include rows and columns of NVM cells comprising a floating gate, dual transistor, inverter storage element. Supply voltage for selected storage elements is turned off during a programming and an erase mode. Isolation transistors for each NVM cell or for each row of NVM cells may be used to control the supply voltage.
REFERENCES:
patent: 4899070 (1990-02-01), Ou et al.
patent: 5016217 (1991-05-01), Brahmbhatt
patent: 5101378 (1992-03-01), Radjy et al.
patent: 5272368 (1993-12-01), Turner et al.
patent: 6359810 (2002-03-01), Gupta et al.
patent: 6594196 (2003-07-01), Hsu et al.
patent: 6714451 (2004-03-01), Ooishi et al.
patent: 6791881 (2004-09-01), Shukuri et al.
patent: 6898105 (2005-05-01), Sakai et al.
patent: 6995436 (2006-02-01), Kawasaki
Colleran William T.
Wang Bin
Wang Chih-Hsin
Impinj, Inc.
Kavounas Greg
Merchant & Gould
Turk Carl K.
Yoha Connie C.
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