Inverted positive vertical flow chemical vapor deposition reacto

Details Inverted positive vertical flow chemical vapor deposition reacto Inverted positive vertical flow chemical vapor deposition reacto

1987-04-20

1988-03-22

Lacey, David L.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, 156613, 156DIG98, C23C 1600

Patent

active

047321105

ABSTRACT:
A chemical vapor deposition (CVD) reactor system is described comprising a substantially vertical reactor tube having a gas inlet and a gas outlet, a pedestal mounted within the reactor tube having a structure for securing a substrate thereto so that a surface of the substrate is exposed downward, and apparatus for providing a gas mixture to the reactor tube, the gas mixture being introduced into the reactor tube via the gas inlet and subsequently withdrawn via the gas outlet, the gas inlet and outlet being positioned, with respect to the substrate, below and above, respectively. The gas mixture is maintained in substantially uniform plug flow as it is directed into close proximity to the exposed surface of the substrate. This permits the CVD growth of physically uniform layers, both in terms of thickness and composition, having low contamination concentrations over large substrate surface areas.

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K. Ulbrich, Laminar Diffuser Head for Continuous CVD Devices with U-Shaped Carriers, IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980, pp. 3972, 3973.

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