Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-04-06
2009-06-16
Nguyen, Thanh (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S069000, C257S347000, C257S350000, C257SE29068
Reexamination Certificate
active
07547917
ABSTRACT:
An apparatus and method for an inverted multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device may be different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with an active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
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Gauthier Jr. Robert J.
Mousa Mahmoud A.
Putnam Christopher S.
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Kotulak Richard
Nguyen Thanh
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