Inverted heterojunction photodiode

Details Inverted heterojunction photodiode Inverted heterojunction photodiode

1978-06-26

1980-01-08

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 16, 357 61, 148175, H01L 2714

Patent

active

041830350

ABSTRACT:
A low-leakage, heterojunction photodiode for use as a detector sensitive to infrared radiation is provided. The diode structure comprises a PbTe substrate of n-type conductivity with an n-type epitaxial buffer layer on the substrate and an epitaxial active layer on the buffer layer. The buffer layer is either Pb.sub.(1-x) S.sub.x Te or Pb.sub.1-x Se.sub.x Te with the atomic fraction of S or Se, x, being greater than 0 but less than 0.1. The active layer is Pb.sub.1-y Sn.sub.y Te with the atomic fraction of Sn, y, being greater than 0 but less than 0.3. There is a p-n junction created in the active layer with the n side of the junction being adjacent the buffer layer. Metal is deposited on the substrate and on the active layer to provide electrical contact to the diode.

REFERENCES:
patent: 4021836 (1977-05-01), Andrews
patent: 4048535 (1977-09-01), Cox
patent: 4053919 (1977-10-01), Andrews
patent: 4064621 (1977-12-01), Lo
patent: 4075043 (1978-02-01), Clarke
patent: 4080723 (1978-03-01), Holloway

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