1976-04-12
1977-05-03
Edlow, Martin H.
357 16, 357 61, H01L 2714, H01L 29161
Patent
active
040218368
ABSTRACT:
An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.
REFERENCES:
patent: 3911469 (1975-10-01), Wrobel
patent: 3961998 (1976-06-01), Scharnhorst
Walpole et al., Solid State Electronics, 1972, vol. 15, pp. 403-407.
Holloway et al., Journal of Appl. Physics, vol. 41, No. 8, July, 1970, pp. 3543-3545.
Walpole et al., Appl. Phys. Lett., vol. 23, No. 11, Dec. 1, 1973, pp. 620-622.
Andrews, II Austin M.
Clarke John E.
Eden Richard C.
Gertner Edward R.
Longo Joseph T.
Edlow Martin H.
O'Brien William J.
Rusz Joseph E.
The United States of America as represented by the Secretary of
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