Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-04-27
1994-02-08
Popek, Joseph A.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 49, 257 12, 257 51, H01L 29161
Patent
active
052850838
ABSTRACT:
A heterojunction bipolar transistor having base, emitter and undoped amorphous silicon collector regions formed on a crystalline silicon substrate. A p-n junction is formed in the substrate, beneath the collector region. A single such transistor may be configured as a static memory device which may be reversibly switched between stable first and second states by applying a voltage of about 8 to 10 volts to the collector and by selectively applying positive or negative pulses of about .+-.0.75 volts to the base.
REFERENCES:
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4414557 (1983-11-01), Amemiya et al.
Bondarionok Elena
Krasnitski Vasilii
Poklonski Nickolai
Pulfrey David L.
Samuilov Vladimir
Nguyen Viet Q.
Popek Joseph A.
The University of British Columbia
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