Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1995-06-07
1998-09-01
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257369, 257903, H01L 2904
Patent
active
058013962
ABSTRACT:
A CMOS device architecture which includes substrate-gated inverted PMOS transistors, as well as bulk NMOS. The inverted-PMOS channels are formed in a different layer from the NMOS gates, and these layers may even have different compositions. Moreover, the NMOS and inverted-PMOS devices have different gate oxide layers, so the thicknesses can be independently optimized. The drain underlap of the inverted device is defined by a patterning step, so it can be increased for high-voltage operation if desired.
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Blanchard Richard A.
Chan Tsiu Chiu
Guritz Elmer H.
Han Yu-Pin
Bachand Richard A.
Galanthay Theodore E.
Jorgenson Lisa K.
Prenty Mark V.
STMicroelectronics Inc.
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