Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1999-06-11
2000-11-14
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
2042982, 20429809, 20429808, 20439816, 20429817, 20429812, C23C 1435
Patent
active
061465097
ABSTRACT:
An inverted field circular planar magnetron sputtering device is described that produces coatings with a high degree of thickness uniformity on round wafer-like substrates. It is a compact source with no moving mechanical parts. DC signals applied to low power electromagnetic coils provide control of the coating thickness uniformity throughout the life of the target. AC signals applied to the coils oscillate the sputtering rings to improve target utilization and maintain a clean target surface. Utilization of target material is about 40% for both magnetic and non-magnetic target materials. The design accommodates versions for both direct and indirect water cooling.
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J. Wilson and R. Potter, "Performance Of A Variable-Plasma Computer-Controlled Sputtering Source", Surface and Coatings Technology 72(1995) pp. 196-199.
Chacko-Davis Daborah
Hamrick Claude A.S.
Nguyen Nam
SciVac
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