Inverted epitaxial process semiconductor devices

Details Inverted epitaxial process semiconductor devices Inverted epitaxial process semiconductor devices

1994-01-03

1995-05-16

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257335, 257502, 257506, 257344, H02L 2704

Patent

active

054163544

ABSTRACT:
A semiconductor device is disclosed having improved vertical gain symmetry, and which includes thick, lightly-doped regions which are dielectrically isolated and provided by at least two separately processed semiconductor wafers which are bonded together and further processed to provide the finished device. Alternate embodiments include buried layers exhibiting very low resistance. Further alternate embodiments provide high voltage and/or high current devices which are fabricated together with low-power circuitry as an integrated circuit.

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